MOSFET. PV604CA Datasheet

PV604CA Datasheet PDF

Part PV604CA
Description N&P-Channel MOSFET
Feature PV604CA N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 25mΩ @VGS =10V .
Manufacture UNIKC
Datasheet
Download PV604CA Datasheet

PV604CA N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PV604CA Datasheet




PV604CA
PV604CA
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
40V
RDS(ON)
25mΩ @VGS =10V
-40V
35mΩ @VGS = -10V
ID
6A
-5.5A
Channel
N
P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 40
VDS P -40
Gate-Source Voltage
N ±20
VGS P ±20
Continuous Drain Current
TA = 25 °C
TA = 70°C
N6
P -5.5
ID N 5
P -4.5
Pulsed Drain Current1
N 30
IDM P -25
Avalanche Current
N 12
IAS P -23
Avalanche Energy
L = 0.1mH
N 7.2
EAS P 26
Power Dissipation3
TA = 25 °C
TA = 70 °C
N
2
P
PD
N
1.3
P
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.0 1 2014/8/5



PV604CA
PV604CA
N&P-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
t 10s
RqJA
Steady-State
N-ch
60
91
Junction-to-Ambient2
t 10s
RqJA
Steady-State
P-ch
60
90
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t 10s value.
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
CH. UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
VGS = 0V, ID = 250mA
VGS = 0V, ID = -250mA
VDS = VGS, ID = 250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±20V
VDS = 32V, VGS = 0V
VDS = -32V, VGS = 0V
VDS = 30V, VGS = 0V, TJ = 55 °C
VDS = -30V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 6A
VGS = -4.5V, ID = -4.5A
VGS = 10V, ID = 6A
N
P
N
P
N
P
N
P
N
P
N
P
N
40
-40
1.3 1.6
2.3
V
-1 -1.7 -3
±100
nA
±100
1
-1
mA
10
-10
22 35
34 50
19 25
VGS = -10V, ID = -5.5A
P
Forward Transconductance1
gfs
VDS = 10V, ID = 6A
VDS = -10V, ID = -5.5A
N
P
27 35
30
18
S
REV 1.0 2 2014/8/5




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