PV604CA

PV604CA N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 25mΩ @VGS =10V -40V 35mΩ @VGS = -10V ID 6A -5.5A Channel N P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 40 VDS P -40 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current TA = 25 °C TA = 70°C N6 P -5.5 ID N 5 P -4.5 Pulsed Drain Current1 N 30 IDM P -25 Avalanche Current N 12 IAS P -23 Avalanche Energy L = 0.1mH N 7.2 EAS P 26 Power Dissipation3 TA = 25 °C TA = 70 °C N 2 P PD N 1.3 P Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C REV 1.0 1 2014/8/5 PV604CA N&P-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 t ≦10s RqJA Steady-State N-ch 60 91 Junction-to-Ambient2 t ≦10s RqJA Steady-State P-ch 60 90 1Pulse width limited by maximum junction temperatur...