DatasheetsPDF.com

PV606BA Datasheet

Part Number PV606BA
Manufacturers UNIKC
Logo UNIKC
Description MOSFET
Datasheet PV606BA DatasheetPV606BA Datasheet (PDF)

PV606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 18mΩ @VGS = 10V ID 7.7A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 7.7 6 28 Avalanche Current IAS 12.6 Avalanche Energy L =0.1mH EAS 7.9 Power Dissipation TA= 25 °C TA =70 °C PD 1.8 1.1 Junction .

  PV606BA   PV606BA






MOSFET

PV606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 18mΩ @VGS = 10V ID 7.7A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 7.7 6 28 Avalanche Current IAS 12.6 Avalanche Energy L =0.1mH EAS 7.9 Power Dissipation TA= 25 °C TA =70 °C PD 1.8 1.1 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient RqJA 69 Junction-to-Case RqJC 25 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.0 1 2014/11/28 PV606BA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARA.


2017-02-03 : PV563BA    PV555BA    PV551BA    HMC717ALP3E    PV548BA    PV600BA    PV606BA    PF610HV    PV510BA    PV516DA   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)