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PXTA44 Datasheet

Part Number PXTA44
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet PXTA44 DatasheetPXTA44 Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. FEATURES High Breakdown Voltage. PXTA44 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC PC PC* Tj 500 400 6 300 500 1 150 Storage Temperature Range Tstg -55 150 * : Mounted on ceramic substrate(250 0.8t) UNIT V V V mA mW W ELECTRICAL CHARACTE.

  PXTA44   PXTA44






Part Number PXTA44
Manufacturers MCC
Logo MCC
Description NPN Transistor
Datasheet PXTA44 DatasheetPXTA44 Datasheet (PDF)

PXTA44 Features • Low Collector-Emitter Saturation Voltage • Halogen Free Available Upon Request By Adding Suffix "-HF" • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) NPN Silicon High Voltage Transistor Maximum Ratings @ 25°C Unless Otherwise Specified • Operating Junction Temperature Range: -55℃ to +150℃ • Storage Temperature Range: -55℃ to +150℃ • Thermal Resistance.

  PXTA44   PXTA44







EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. FEATURES High Breakdown Voltage. PXTA44 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC PC PC* Tj 500 400 6 300 500 1 150 Storage Temperature Range Tstg -55 150 * : Mounted on ceramic substrate(250 0.8t) UNIT V V V mA mW W ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (1) Collector-Emitter Breakdown Voltage (2) Emitter-Base Breakdown Voltage Collector Cut off Current (1) Collector Cut off Current (2) Emitter Cutoff Current V(BR)CBO V(BR)CEO V(BR)CES V(BR)EBO ICBO ICES IEBO DC Current Gain * hFE Collector-Emitter Saturation Voltage * VCE(sat) Base-Emitter Saturation Voltage * VBE(sat) *Pulse Test : Pulse Width 300 S, Duty Cycle 2.0% TEST CONDITION IC=100 A, IE=0 IC=1mA, IB=0 IC=100 A, IB=0 IE=10 A, IC=0 VCB=400V, IE=0 VCE=400V, IB=0 VEB=4V, IC=0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA IC=10mA, IB=1mA IC=10mA, IB=1mA 2011. 5. 25 Revision No : 0 MIN. 500 400 400 6.0 40 50 45 40 - TYP. - MAX. - 100 500 100 200 0.5 0.75 UNIT V V V V nA nA nA V V 1/2 PXTA44 2011. 5. 25 Revision No : 0 2/2 .


2016-06-22 : TP4212-470M-R    TP4212-330M-R    TP4212-220M-R    TP4212-150M-R    TP4212-100M-R    TP4212-8R2M-R    TP4212-6R8M-R    TP4212-5R6M-R    TP4212-3R3M-R    TP4212-4R7M-R   


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