PZ0703EV
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
7mΩ @VGS = -10V
ID -15A
SOP- 08
...
PZ0703EV
P-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
7mΩ @VGS = -10V
ID -15A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS -30
Gate-Source
Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
-15 -11 -69
Avalanche Current
IAS -69
Avalanche Energy
L = 0.1mH
EAS
238
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.5 1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS 50 °C / W
Ver 1.0
1 2013-5-8
PZ0703EV
P-Channel Enhancement Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage Gate T...
