PZ2103NV

PZ2103NV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 21mΩ @VGS = 10V -30V 34mΩ @VGS = -10V ID Channel 8A N -6A P SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 VDS P -30 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current TA = 25 °C TA = 70 °C N8 P -6 ID N 6 P -5 Pulsed Drain Current1 N 36 IDM P -27 Avalanche Current N 20 IAS P -20 Avalanche Energy L = 0.1mH N 21 EAS P 21 Power Dissipation TA = 25 °C TA = 70 °C N2 P2 PD N 1.3 P 1.3 Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec .) TJ, TSTG TL -55 to 150 275 UNITS V A mJ W °C Ver 1.0 1 2012/4/16 PZ2103NV N&P-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 40 62.5 UNITS °C...