PZD502CMA
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 450mΩ @VGS = 4.5V
ID 1...
PZD502CMA
N-Channel Logic Level Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 450mΩ @VGS = 4.5V
ID 1A
SOT-23 (S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS 20
Gate-Source
Voltage
VGS ±8
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
1 0.7 5
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
PD TJ, TSTG
0.6 0.4 -55 to 150
UNITS V
A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS 183 °C / W
REV 1.0 1 2014/9/1
PZD502CMA
N-Channel Logic Level Enhancement Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage Gate Threshold
Voltage Gate-Body Leakage
V(BR)DSS VGS(th...