PZT3906

® PZT3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type PZT3906 s Marking 3906 s s s SILICON EPITAXIAL PLANAR PNP TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS PZT3904 2 1 SOT-223 2 3 APPLICATIONS WELL SUITABLE FOR SMD MOTHER BOARD ASSEMBLY s SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T C = 25 C Storage Temperature Max. Operating Junction Temperature o Value -60 -40 -6 -200 1 -65 to 150 150 Unit V V V mA W o o C C June 2002 1/4 PZT3906 THERMAL DATA R thj-amb Thermal Resistance Junction-Ambient 2 Max 125 o C/W Device mounted on a PCB of 1 cm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I BEX Parameter Collector Cut-off Current (V BE = 3 V) Collector Cut-off Current (V BE = 3 V) Test Conditions V CE = -30 V V CE = -30 V I C = -1 mA -40 Min. Typ. Max. -50 -50 Unit nA nA V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = -10 µ A -60 V V (BR)EBO I E = -10 µ A -6 V V CE(sat)...