Elektronische Bauelemente
Description
RoHS Compliant Product
The PZT4401 is designed for general purpose switching an...
Elektronische Bauelemente
Description
RoHS Compliant Product
The PZT4401 is designed for general purpose switching and amplifier applications.
PZT4401
NPN Transistor
Epitaxial Planar Transistor
SOT-223
Features
*High Power Dissipation: 1500mW at 25 oC *High DC Current Gain: 100~300 at 150mA *Complementary to PZT4403
440 1
ABSOLUTE MAXIMUM RATINGS Ta=25oC
Symbol
Parameter
VCBO
Collector-Base
Voltage
VCEO VEBO
IC
Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (Continous)
PD Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
REF.
A C D E I H
Millimeter Min. Max. 6.70 7.30
2.90 3.10 0.02 0.10
0 10
0.60 0.80 0.25 0.35
REF.
B J 1 2 3 4 5
Millimeter Min. Max.
13 TYP.
2.30 REF. 6.30 6.70 6.30 6.70
3.30 3.70 3.30 3.70
1.40 1.80
Value 60 40 5
600 1.5 -55~+150
Units V V V mA
W CO
ELECTRICAL CHARACTERISTICS Tamb=25oC
Parameter
Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage Collector-Base Cutoff Current Collector Saturation
Voltage
Base Satruation
Voltage
DC Current Gain
Symbol BVCBO *BVCEO BVEBO
ICES
*VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2
*hFE1
*hFE2 *hFE3
Min 60 40 5 -
750
20 40 80
*hFE4 *hFE5
100 40
Gain-Bandwidth Product Output Capacitance
fT 250 Cob -
unless otherwise specified
Typ. -
-
-
-
-
-
Max -
100 400 750
950 1.2
-
300 6.5
Unit V V V nA mV mV
mV V
MHz pF
Test Conditions IC= 100µA IC= 1mA IE= 10µA VCE= 35V,VBE=0.4V
IC=150m A,IB=15mA
IC=500m A,IB=50mA IC=1...