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PZTA92T1 Datasheet

Part Number PZTA92T1
Manufacturers Motorola
Logo Motorola
Description PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
Datasheet PZTA92T1 DatasheetPZTA92T1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PZTA92T1/D High Voltage Transistor PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 PZTA92T1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Total Power Dissipation up to TA = 25°C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value – 300 –300 – 5.0 – 500 1.5 – 65 to +150 150 Unit Vdc Vdc Vdc mAdc Watts °C °C .

  PZTA92T1   PZTA92T1






Part Number PZTA92T1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description High Voltage Transistor
Datasheet PZTA92T1 DatasheetPZTA92T1 Datasheet (PDF)

ON Semiconductort High Voltage Transistor PNP Silicon COLLECTOR 2,4 PZTA92T1 ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol BASE 1 EMITTER 3 Value Unit SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Total Power Dissipation up to TA = 25°C(1) Storage Temperature Range Junction Temperature DEVICE MARKING VCEO VCBO VEBO IC PD Tstg TJ –300 –300 –5.0 –500 1.5 –65 to.

  PZTA92T1   PZTA92T1







PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PZTA92T1/D High Voltage Transistor PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 PZTA92T1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Total Power Dissipation up to TA = 25°C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value – 300 –300 – 5.0 – 500 1.5 – 65 to +150 150 Unit Vdc Vdc Vdc mAdc Watts °C °C SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT 4 1 2 3 CASE 318E–04, STYLE 1 TO–261AA DEVICE MARKING P2D THERMAL CHARACTERISTICS Characteristic Thermal Resistance from Junction to Ambient(1) Symbol RθJA Max 83.3 www.DataSheet4U.com Unit °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = –100 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = –100 µAdc, IC = 0) Collector–Base Cutoff Current (VCB = – 200 Vdc, IE = 0) Emitter–Base Cutoff Current (VBE = – 3.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO – 300 – 300 – 5.0 — — — — — – 0.25 – 0.1 Vdc Vdc Vdc µAdc µAdc ON CHARACTERISTICS DC Current Gain(2) (IC = – 1.0 mAdc, VCE = – 10 Vdc) (IC = –10 mAdc, VCE = – 10 Vdc) (IC = – 30 mAdc, VCE = – 10 Vdc) Saturation Voltages (IC = –20 mAdc, IB = –2.0 mAdc) (IC = –20 mAdc, IB = –2.0 mAdc) hFE 2.


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