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Q-62702-G66

Siemens Semiconductor Group

GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Typical Gain Control range over 50dB)

CGY 121 A GaAs MMIC Preliminary Datasheet l l l l l l l RF-in; -Vg Vcontrol 6 RF-GND 5 4 Variable gain amplifier (MMIC...


Siemens Semiconductor Group

Q-62702-G66

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Description
CGY 121 A GaAs MMIC Preliminary Datasheet l l l l l l l RF-in; -Vg Vcontrol 6 RF-GND 5 4 Variable gain amplifier (MMIC-Amplifier) for mobile communication Typical Gain Control range over 50dB Positive Control Voltage 50Ω input and output matched Low power consumption Operating voltage range: 2.7 to 6 V Frequency range 800 MHz ... 2.5 GHz 3 2 1 Vd2; RF-out RF-GND Vd1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CGY 121 A Y9S Q-62702-G66 MW-6 Maximum ratings Characteristics Drain voltage Neg. supply voltage Pos. control voltage Channel temperature Storage temperature range Total power dissipation (TS < 81°C) 2) Thermal resistance Characteristics Channel-soldering point (GND) 1) 2) Symbol max. Value 8 -8 4 150 -55...+150 550 Unit V V V °C °C mW VD VG Vcon TCh Tstg Ptot Symbol max. Value 125 Unit K/W RthChS Dimensions see page 9. Please care for sufficient heat dissipation on the pcb! *) Pin-out changed compared to CGY120: 180° rotation Siemens Aktiengesellschaft 1 Semiconductor Group 1 23.06.98 HL HF PE GaAs1 1998-11-01 CGY 121 A Functional block diagram: VD1 (3) VD2 (1) Pin / -VG(4) Pout (1) Vcon (6) Control Circuit GND (2, 5) Pin # 1 2 3 4 5 6 Name VD2 / Pout RF-Gnd VD1 VG / Pin RF-Gnd Configuration Drain voltage 2nd stage / RF-0utput Drain voltage 1st stage Negative voltage at current control circuit (-4V) / RF-Input Vcontrol Positive voltage for gain control (...




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