Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators)
Silicon Dual Schottky Diode
BAT 114-099
Features • High barrier diode for balanced mixers, phase detectors and modulat...
Silicon Dual Schottky Diode
BAT 114-099
Features High barrier diode for balanced mixers, phase detectors and modulators
ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type BAT 114-099 Marking S7 Ordering Code (taped & reel) Q62702-A1017 Pin Configuration Package1) SOT-143
1)
Dimensions see chapter Package Outlines
Maximum Ratings (per diode) Parameter Reverse
voltage Forward current Operation temperature Storage temperature Power dissipation, TS ≤ 70 °C Symbol Limit Values 4 90 − 55 to + 150 − 55 to + 150 100 Unit V mA °C °C mW
VR IF Top Tstg Ptot
Semiconductor Group
326
01.97
BAT 114-099
Thermal Resistance (per diode) Parameter Junction to soldering point Junction to ambient1)
1)
Symbol
Limit Values ≤ 780 ≤ 1020
Unit K/W K/W
RthJS RthJA
Mounted on alumina 15 mm × 16.7 mm to 0.7 mm
Electrical Characteristics (per diode; TA = 25 °C) Parameter Breakdown
voltage IR = 5 µA Forward
voltage IF = 1 mA IF = 10 mA Forward
voltage matching1) IF = 10 mA Diode capacitance VR = 0 V, f = 1 MHz Forward resistance IF = 10 mA / 50 mA
1)
Symbol
Limit Values min. typ. max.
Unit V
VBR
4
− 0.6 0.7 − 0.25 5.5
− V 0.7 0.8 mV 10 pF 0.5 − Ω
VF
∆ VF
− − − − −
CT RF
∆VF is difference between lowest and highest VF in component.
Semiconductor Group
327
BAT 114-099
Forward Current IF = f(VF)
Semiconductor Group
328
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