Q62702-A917

Silicon Switching Diodes BAS 79 A … BAS 79 D Switching applications q High breakdown voltage q Common cathode q Type BAS 79 A BAS 79 B BAS 79 C BAS 79 D Marking BAS 79 A BAS 79 B BAS 79 C BAS 79 D Ordering Code (tape and reel) Q62702-A914 Q62702-A915 Q62702-A916 Q62702-A917 Pin Configuration Package1) SOT-223 Maximum Ratings Parameter Symbol BAS 79 A Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation, TS = 114 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point 1) 2) Values BAS BAS 79 B 79 C 100 100 1 1 10 1.2 150 – 65 … + 150 200 200 Unit BAS 79 D 400 400 A V VR VRM IF IFM IFS Ptot Tj Tstg 50 50 W ˚C Rth JA Rth JS ≤ ≤ 170 30 K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAS 79 A … BAS 79 D Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA V(BR) BAS 79 A BAS 79 B BAS 79 C BAS 79 D VF – – IR – – – – 1 50 – – 1.6 2 µA Values typ. max. Unit V 50 100 200 400 – – – – – – – – Forward voltage1) IF = 1 A IF = 2 A Reverse current VR = VR max VR = VR max, TA = 150 ˚C AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 Ω measured at IR = 20 mA Test circuit for rever...