Q62702-A964

BAT 64-07 Silicon Schottky Diodes Preliminary data For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration BAT 64-07 67s Q62702-A964 Package 1 = C1 2 = C2 3 = A2 4 = A1 SOT-143 Maximum Ratings Parameter Diode reverse voltage Forward current Symbol Values 40 250 120 800 mW 250 150 - 55 ... + 150 ≤ 495 ≤ 355 °C Unit V mA VR IF Average forward current (50/60Hz, sinus) IFAV Surge forward current (t ≤ 10ms) IFSM Total Power dissipation Ptot Tj Tstg RthJA RthJS TS = 61 °C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Jun-27-1996 BAT 64-07 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 320 385 440 570 2 200 350 430 520 750 µA VR = 25 V, TA = 25 °C VR = 25 V, TA = 85 °C Forward voltage VF mV V IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA AC Characteristics Diode capacitance CT 4 6 pF VR = 1 V, f = 1 MHz Semiconductor Group 2 Jun-27-1996 BAT 64-07 Forward Current IF = f(VF) Reverse current IR = f (VR) TA = Parameter Diode capacitance CT = f (VR) f = 1MHz Forward current IF = f (TA*;TS) * Package mou...