| Part Number | Q62702-C2286 |
| Manufacturer | Siemens Semiconductor Group |
| Title | NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) |
| Description | BCR 133W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ, R2=10k... |
| Features |
breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Collector cutoff current
ICBO
100
nA mA 0.75 30 V 0.3 1.5 2.5 13 1.1 kΩ -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hFE VCEsat Vi(off)
0.8
VEB = 10 V, IC = 0
DC current gain
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
I... |
| Datasheet | Q62702-C2286 pdf datasheet |
| Part Number | Q62702-C2289 |
| Manufacturer | Siemens Semiconductor Group |
| Title | NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) |
| Description | BCR 142W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=47k. |
| Features |
ase breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Collector cutoff current
ICBO
100
nA µA 227 70 V 0.3 1.2 2.5 29 0.52 kΩ -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hFE VCEsat Vi(off)
0.5
VEB = 10 V, IC = 0
DC current gain
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1). |
| Datasheet | Q62702-C2289 pdf datasheet |
| Part Number | Q62702-C2288 |
| Manufacturer | Siemens Semiconductor Group |
| Title | NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) |
| Description | BCR 141W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22k. |
| Features |
breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Collector cutoff current
ICBO
100
nA µA 350 50 V 0.3 1.5 2.5 29 1.1 kΩ -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hFE VCEsat Vi(off)
0.8
VEB = 10 V, IC = 0
DC current gain
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC. |
| Datasheet | Q62702-C2288 pdf datasheet |
| Part Number | Q62702-C2287 |
| Manufacturer | Siemens Semiconductor Group |
| Title | NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) |
| Description | BCR 135W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ, R2=47K. |
| Features |
se breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Collector cutoff current
ICBO
100
nA µA 167 70 V 0.3 1 1.4 13 0.24 kΩ -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hFE VCEsat Vi(off)
0.5
VEB = 6 V, IC = 0
DC current gain
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC. |
| Datasheet | Q62702-C2287 pdf datasheet |
| Part Number | Q62702-C2285 |
| Manufacturer | Siemens Semiconductor Group |
| Title | NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) |
| Description | BCR 119W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ) Type. |
| Features |
voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Base-emitter breakdown voltage
V(BR)EBO
5
IE = 10 µA, IC = 0
Collector cutoff current
ICBO
100
nA 120 630 V 0.3 0.8 1.1 6.2 kΩ
VCB = 40 V, IE = 0
DC current gain
hFE VCEsat Vi(off)
0.4
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC =. |
| Datasheet | Q62702-C2285 pdf datasheet |
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