| Part Number | Q62702-C2411 |
| Manufacturer | Siemens Semiconductor Group |
| Title | NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit) |
| Description | BCR 10PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two (galvanic) internal isolate... |
| Features |
tics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
50 10 1 -
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Collector cutoff current
ICBO
100
nA mA 0.75 30 V 0.3 1.5 2.5 13 1.1 kΩ -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hF... |
| Datasheet | Q62702-C2411 pdf datasheet |
| Part Number | Q62702-C2419 |
| Manufacturer | Siemens Semiconductor Group |
| Title | PNP Silicon Digital Transistor Array (Switching circuit/ inverter/ interface circuit/ driver circuit) |
| Description | . |
| Features |
. |
| Datasheet | Q62702-C2419 pdf datasheet |
| Part Number | Q62702-C2418 |
| Manufacturer | Siemens Semiconductor Group |
| Title | PNP Silicon Digital Transistor Array (Switching circuit/ inverter/ interface circuit/ driver circuit) |
| Description | BCR 191S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated . |
| Features |
ltage Values typ. max. Unit
V(BR)CEO
50 22 1 -
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Collector cutoff current
ICBO
100
nA µA 350 50 V 0.3 1.5 2.5 29 1.1 kΩ -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hFE VCEsat Vi(off)
0.8
VEB = 10 V, IC. |
| Datasheet | Q62702-C2418 pdf datasheet |
| Part Number | Q62702-C2417 |
| Manufacturer | Siemens Semiconductor Group |
| Title | NPN Silicon Digital Transistor Array (Switching circuit/ inverter/ interface circuit/ driver circuit) |
| Description | BCR 148S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvaniv) internal isolated . |
| Features |
tage Values typ. max. Unit
V(BR)CEO
50 47 1 -
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Collector cutoff current
ICBO
100
nA µA 164 70 V 0.3 1.5 3 62 1.1 kΩ -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hFE VCEsat Vi(off)
0.8
VEB = 10 V, IC = . |
| Datasheet | Q62702-C2417 pdf datasheet |
| Part Number | Q62702-C2416 |
| Manufacturer | Siemens Semiconductor Group |
| Title | NPN Silicon Digital Transistor Array (Switching circuit/ inverter/ interface/ driver circuit) |
| Description | BCR 141S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface, driver circuit • Two (galvanic) internal isolated Transist. |
| Features |
lues typ. max. Unit
V(BR)CEO
50 22 1 -
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Collector cutoff current
ICBO
100
nA µA 350 50 V 0.3 1.5 2.5 29 1.1 kΩ -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hFE VCEsat Vi(off)
0.8
VEB = 10 V, IC = 0
DC . |
| Datasheet | Q62702-C2416 pdf datasheet |
| Part Number | Q62702-C2415 |
| Manufacturer | Siemens Semiconductor Group |
| Title | NPN Silicon Digital Transistor Array (Switching circuit/ inverter/ interface circuit/ driver circuit) |
| Description | . |
| Features |
. |
| Datasheet | Q62702-C2415 pdf datasheet |
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