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QM3007S

UBIQ

P-Ch 30V Fast Switching MOSFETs

QM3007S P-Ch 30V Fast Switching MOSFETs General Description The QM3007S is the highest performance trench P-ch MOSFETs ...


UBIQ

QM3007S

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Description
QM3007S P-Ch 30V Fast Switching MOSFETs General Description The QM3007S is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3007S meet the RoHS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Product Summery BVDSS -30V RDSON 62mΩ ID -5A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch SOT89 Pin Configuration DD DD Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 S SS G Rating -30 ±20 -5 -3.8 -10 37 15 2.08 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Typ. ----- Max. 85 60 Unit ℃/W ℃/W Rev A.01 D041410 1 QM3007S P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source...




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