QM3208S
Dual N-Ch 30V Fast Switching MOSFETs
General Description
The QM3208S is the highest performance trench N-ch MOS...
QM3208S
Dual N-Ch 30V Fast Switching
MOSFETs
General Description
The QM3208S is the highest performance trench N-ch
MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3208S meet the RoHS and Green Product requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available
Product Summery
BVDSS 30V
RDSON 25mΩ
ID 6.2A
Applications
z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System z Load Switch
SOP8 Pin Configuration
D1 D1 D2 D2
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TA=25℃ TSTG
TJ
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
S1 G1 S2 G2
Rating 30 ±20 6.2 5 25 26.6 12.7 1.5
-55 to 150 -55 to 150
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
Typ. -----
Max. 85 25
Units V V A A A mJ A W ℃ ℃
Unit ℃/W ℃/W
Rev A.01 D041811
1
QM3208S
Dual N-Ch 30V Fast Switching
MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Paramet...