QN7002

QN7002 N-CHANNEL MOSFET FOR SWITCHING Preliminary Data Sheet R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 Description The QN7002, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 Ω MAX. (VGS = 10 V, ID = 100 mA) RDS(on)2 = 3.2 Ω MAX. (VGS = 4.5 V, ID = 50 mA) Ordering Information Part Number Lead Plating Packing Package QN7002-T1B-AT Pure Sn 3000p/Reel SC-59 (Mini Mold) Remark "-AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts. Remark for Agent ORDER NUMBER “2SK4079(1)” must be used to order, instead of “QN7002”. For instance, “2SK4079(1)-T1B-AT” Absolute Maximum Ratings (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note Total Power Dissipation Channel Temperature Storage Temperature Note PW ≤ 10 μs, Duty Cycle ≤ 1% VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 60 ±20 200 ±800 200 150 −55 to +150 V V mA mA mW °C °C Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD ±400 V (MIL STD; C = 100 pF, R = 1.5 kΩ, 5 times), as reference value. R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 Page 1 of 6 QN7002 Electrical Characteristics (TA = 25°C) Characteristics Zero Gate Voltage Drain Curre...