QPD1006

QPD1006 450W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET Product Overview The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 Ω in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and CW operations. ROHS compliant. Evaluation boards are available upon request. Functional Block Diagram NI-50CW Key Features Frequency: 1.2 to 1.4 GHz Output Power (P3dB)1: 313 W (CW), 468 W (Pulsed) Linear Gain1: 17.5 dB (CW), 17.8 dB (Pulsed) Typical DEFF3dB1: 55% (CW), 62.2% (Pulsed) Operating Voltage: 45 V (CW), 50 V (Pulsed) Low thermal resistance package Pulse capable Note 1: @ 1.3 GHz, 25 °C Applications Military radar Civilian radar Input Matching Network Output Matching Network Part No. QPD1006 QPD1006EVB3 Description 1.2  – 1.4 GHz RF IMFET Evaluation Board Datasheet Rev. D, July 16, 2018 | Subject to change without notice - 1 of 16 - www.qorvo.com QPD1006 450W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET Absolute Maximum Ratings1 Recommended Operating Conditions1 Parameter Rating Units Breakdown Voltage,BVDG Gate Voltage Range, VG Drain Current +145 -7 to +2 60 V V A Gate Current Range, IG Power Dissipation, 10% DC 1 mS PW, PDISS RF Input Power, 10% DC 1 mS PW, 1.3 GHz, T = 25 °C See page 4. 496 +46 mA W dBm Mounting Temperature (30 Seconds) Storage Temperature 320  −65 to...