Preliminary Datasheet
R2J20658BNP
Integrated Driver - MOS FET (DrMOS)
R07DS0550EJ0101 (Previous No.: R07DS0542EJ0100)
...
Preliminary Datasheet
R2J20658BNP
Integrated Driver - MOS FET (DrMOS)
R07DS0550EJ0101 (Previous No.: R07DS0542EJ0100)
Rev.1.01 Sep 30, 2011
Description
The R2J20658BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating the need for an external SBD for this purpose.
Features
Based on Intel 6 6 DrMOS Specification. Built-in power MOS FET suitable for Desktop, Server application. Low-side MOS FET with built-in SBD for lower loss and reduced ringing. Built-in driver circuit which matches the power MOS FET Built-in tri-state input function which can support a number of PWM controllers High-frequency operation (above 1 MHz) possible VIN operating-
voltage range: 20 Vmax Large average output current (Max.40 A) Achieve low power dissipation Controllable driver: Remote on/off Support Mid-
Voltage PWM signal to enter zero current detection Double thermal protection: Thermal Warning & Thermal Shutdown Built-in bootstrapping Switch Small package: QFN40 (6 mm 6 mm 0.95 mm) Pb-free/Halogen-free
Outline
THWN DISBL# LSDBL#
PWM
Integrated Driver-MOS FET (DrMOS) QFN40 package 6 mm × 6 mm
VCIN Reg5V BOOT GH VIN
1
40
Driver Pad
10
High-side MOS Pad
11
MOS FET Driver
VSWH
Low-sid...