isc N-Channel MOSFET Transistor
R6004JND3
FEATURES ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Mi...
isc N-Channel
MOSFET Transistor
R6004JND3
FEATURES ·Drain Current –ID=4A@ TC=25℃ ·Drain Source
Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.43Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage
600
V
VGS
Gate-Source
Voltage-Continuous
±30
V
ID
Drain Current-Continuous
4
A
IDM
Drain Current-Single Pluse
12
A
PD
Total Dissipation @TC=25℃
60
W
TJ
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 2.11 ℃/W
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isc N-Channel
MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold
Voltage
VDS= 5V; ID=450uA
RDS(on) Drain-Source On-Resistance
VGS= 15V; ID=2A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS= 600V; VGS= 0
VSD
Forward On-
Voltage
IS= 4A; VGS= 0
R6004JND3
MIN MAX UNIT
600
V
5.0
7.0
V
1.43
Ω
±100 nA
100
μA
1.7
V
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