R6006PND3FRA

R6006PND3FRA 　　Nch 600V 6A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 600V 1.2Ω ±6.0A 87W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Pb-free plating ; RoHS compliant 5) AEC-Q101 Qualified lOutline DPAK TO-252 　 　　　　　　 lInner circuit 　 lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Power Supply Type Tape width (mm) Quantity (pcs) 16 2500 Taping code TL Marking R6006PND3 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±6.0 A Pulsed drain current IDP*2 ±24 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse IAS*3 3.0 A Avalanche energy, single pulse EAS*3 2.4 mJ Power dissipation (Tc = 25°C) PD*4 87 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20191113 - Rev.002 　 　 R6006PND3FRA 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　　　　 Symbol RthJC*4 RthJA*5 Tsold Values Unit Min. Typ. Max. - - 1.43 ℃/W - - 100 ℃/W - - 265 ℃ lElectrical charac...