R6012JNX
Nch 600V 12A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
600V 0.390Ω ±12A
60W
lFeatures
1) Fast re...
R6012JNX
Nch 600V 12A Power
MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
600V 0.390Ω ±12A
60W
lFeatures
1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant
lOutline
TO-220FM
lInner circuit
lApplication Switching applications
lPackaging specifications Packing
Tube
Packing code
C7 G
Marking
R6012JNX
Basic ordering unit (pcs)
2000
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source
voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID*1 ±12 A
Pulsed drain current
IDP*2 ±36 A
Gate - Source
voltage
VGSS
±30 V
Avalanche current, single pulse
IAS*3 2.9 A
Avalanche energy, single pulse
EAS*3
327 mJ
Power dissipation (Tc = 25°C)
PD 60 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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20190111 - Rev.002
R6012JNX
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s
Datasheet
Symbol
RthJC RthJA Tsold
Values Unit
Min. Typ. Max.
- - 2....