R6018JNX
Nch 600V 18A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
600V 0.286Ω ±18A
72W
lFeatures
1) Fast re...
R6018JNX
Nch 600V 18A Power
MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
600V 0.286Ω ±18A
72W
lFeatures
1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant
lOutline
TO-220FM
lInner circuit
lApplication Switching
lPackaging specifications Packing
Tube
Packing code
C7 G
Marking
R6018JNX
Basic ordering unit (pcs)
2000
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source
voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID*1 ±18 A
Pulsed drain current
IDP*2 ±54 A
Gate - Source
voltage
VGSS
±30 V
Avalanche current, single pulse
IAS*3 4.4 A
Avalanche energy, single pulse
EAS*3
526 mJ
Power dissipation (Tc = 25°C)
PD 72 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved.
1/11
20190111 - Rev.001
R6018JNX
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s
Datasheet
Symbol
RthJC RthJA Tsold
Values Unit
Min. Typ. Max.
- - 1.76 ℃/W
- - 70...