R8003KND3

R8003KND3 　　Nch 800V 3A Power MOSFET VDSS RDS(on)(Max.) ID PD 800V 1.8Ω ±3A 48W lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackage TO-252 　 　 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 lApplication Switching lMarking specification Marking R8003KND3 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 800 V ±3 A ±9 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse Avalanche energy, single pulse IAS EAS*3 0.6 A 19 mJ Power dissipation (Tc = 25°C) PD 48 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190619 - Rev.002 　 　 R8003KND3 　 　 　 　　 　 lThermal characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　　　　 Symbol Rth(j-c)*4 Rth(j-a) Tsold Values Unit Min. Typ. Max. - - 2.6 ℃/W - - 147 ℃/W - - 265 ℃ lStatic characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage Zero gate voltage drain current Gate - Source leakage current Gate threshold vo...