MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA07N3340M
BLOCK DIAGRAM
2 3
R...
MITSUBISHI RF
MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA07N3340M
BLOCK DIAGRAM
2 3
RoHS Compliance , 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION The RA07N3340M is a 7.5-watt RF
MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the enhancement-mode
MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate
voltage increases. With a gate
voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate
voltage and controlling the output power with the input power. FEATURES Enhancement-Mode
MOSFET Transistors (IDD≅0 @ VDD=9.6V, VGG=0V) Pout>7.5W @ VDD=9.6V, VGG=3.5V, Pin=20mW ηT>43% @ Pout=7W (VGG control), VDD=9.6V, Pin=20mW Broadband Frequency Range: 330-400MHz www.DataSheet4U.com Low-Power Control Current IGG=1mA (typ) at VGG=3.5V Module Size: 30 x 10 x 5.4 mm Linear operation is possible by setting the quiescent drain current with the gate
voltage and controlling the ...