MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA45H7687M1
BLOCK DIAGRAM
2 3
...
MITSUBISHI RF
MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA45H7687M1
BLOCK DIAGRAM
2 3
RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION The RA45H7687M1 is a 45-watt RF
MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode
MOSFET transistors. Without the gate
voltage 1 and the gate
voltage 2(VGG1=VGG2=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is supplied to the gate
voltage 1, the output power and the drain current increase as the gate
voltage 2 increases. The output power and the drain current increase substantially with the gate
voltage 2 around 0V (minimum) under the condition when the gate
voltage 1 is kept in 3.4V. The nominal output power becomes available at the state that VGG2 is 4V (typical) and 5V (maximum). At this point, VGG1 has to be kept in 3.4V. At VGG1=3.4V & VGG2=5V, the typical gate currents are 0.4mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate
voltages and controlling the output power with the input power. FEATURES Enhancement-Mode
MOSFET Transistors (IDD≅0 @ VDD=12.8V, VGG=0V)
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RF Input added Gate
Voltage 1(Pin&VGG1) Gate
Voltage 2(V...