RB160VA-40FH

Schottky Barrier Diodes RB160VA-40FH Applications General rectification Dimensions (Unit : mm) 1.3±0.05 0.1 7±0.1 　　 0.05 Features 1) Small mold type. (TUMD2) 2) Low VF, Low IR. 3) High reliability. Construction Silicon epitaxial planar 0.8±0 .05 ROHM : TUMD2 0.6±0 .2 　　　 0.1 dot (year week factory) + day 1.9±0 .1 2.5±0.2 0.8 0.5 2.0 AEC-Q101 Qualified  Land size figure (Unit : mm) 1.1 TUMD2 Structure  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.1 　　　　　 0.05 0.25±0.05 1.75±0.1 3.5±0.05 2.8±0.05 8.0±0.2 2.8±0.05 1.43±0.05 4.0±0.1 φ1.0±0.2 　　　　　0 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current VRM VR Io Forward current surge peak （60Hz・1cyc） Forward current surge peak（t=100μs・1cyc） Junction temperature IFSM IFSM Tj Storage temperature Tstg Limits 40 40 1 5 10 150 -40 to +150 Unit V V A A A ℃ ℃ Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Forward voltage Reverse current VF - 0.50 IR - 1.5 Max. 0.55 50 Unit Conditions V IF=700mA μA VR=40V 0.9±0.08 www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.06 - Rev.D RB160VA-40FH 　 FORWARD CURRENT:IF(A) Electrical characteristic curves (Ta=25C) 1 Ta=150℃ Ta=125℃ 0.1 Ta=75℃ Ta=25℃ 0.01 Ta=-25℃ 0.001 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 REVERSE CURRENT:IR(uA) 100000 10000 1000 100 10 1 0.1 0.01 0.001 0 Ta=150℃ ...