RB215T-90NZ

Schottky barrier diode RB215T-90NZ Applications General rectification (Common cathode dual chip) Dimensions (Unit : mm) 10.0±0.3 　　　 0.1 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 Features 1) Small power mold type.(TO-220) 2) Low IR 3) High reliability Construction Silicon epitaxial planar RB215 ① T-90 1.2 1.3 0.8 (1) (2) (3) 5.0±0.2 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4 　 0.2 8.0 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date Data Sheet Structure (1) (2) (3) ●Packing Dimensions (Unit : mm) 7 540 34.5 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Reverse voltage (repetitive) VRM 90 Reverse voltage (DC) VR 90 Average rectified forward current(*1) Io 20 Forward current surge peak (60Hz/1cyc) (*1) Junction temperature IFSM Tj 100 150 Storage temperature Tstg 40 to 150 (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=110C Electrical characteristic (Ta=25C) Parameter ...