Schottky Barrier Diode
RB238NS100
Data Sheet
lApplication Switching power supply
lDimensions (Unit : mm)
lLand size ...
Schottky Barrier Diode
RB238NS100
Data Sheet
lApplication Switching power supply
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
lFeatures 1) Cathode common type. 2) Low IR 3) High reliability
RB238 NS100
1
lStructure
Cathode
lConstruction Silicon epitaxial planar
ROHM : TO-263S JEITA : SC-83 1 Manufacture Year, Week and Day
lTaping specifications (Unit : mm)
Anode Anode
lAbsolute maximum ratings (Tc = 25°C)
Parameter
Symbol
Limits
Reverse
voltage (repetitive) Reverse
voltage (DC) Average rectified forward current (*1)
VRM VR Io
110 100 40
Forward current surge peak (60Hz・1cyc) (*2) Junction temperature
IFSM Tj
100 150
Storage temperature (*1)1/2Io Per Diode, 60Hz sine wave (*2)Per Diode
Tstg
-55 to +150
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol Min. Typ. Max.
Forward
voltage Reverse current Thermal impedance
VF - - 0.86 IR - - 20 θjc 2.00
Unit V V A A °C °C
Unit Conditions V IF=20A mA VR=100V
°C/W junction to case
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