5.0±0.2NotNeRewcDoemsimgennsded for 8.0±0.2
Schottky Barrier Diode
RB238T-40
Data Sheet
lApplication Switching power ...
5.0±0.2NotNeRewcDoemsimgennsded for 8.0±0.2
Schottky Barrier Diode
RB238T-40
Data Sheet
lApplication Switching power supply
lFeatures 1) Cathode common dual type 2) High reliability 3) Super low IR
lConstruction Silicon epitaxial planar type
lDimensions (Unit : mm)
10.0±00..31
f3.2±0.2
4.5±00..31 2.8±00..21
lStructure
15.0±00..24
12.0±0.2
1
1.2 1.3 0.8
2.45±0.5 2.45±0.5
(1) (2) (3) ROHM : TO220FN
1 : Manufacture date
14.0±0.5
(1) (2) (3) Anode Cathode Anode
2.6±0.5 0.75±00..015
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive peak reverse
voltage Reverse
voltage Average forward rectified current
Non-repetitive forward current surge peak
VRM VR Io IFSM
Operating junction temperature Storage temperature
Tj Tstg
Conditions
Duty≦0.5
Direct reverse
voltage
60Hz half sin wave, resistive load, IO/2 per diode, Tc=85ºC Max.
60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle, per diode
-
-
Limits Unit 45 V 40 V 40 A 100 A 150 °C
-55 to +150 °C
lElectrical and Thermal Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Forward
voltage Reverse current
VF IF=20A IR VR=40V
Thermal resistance
Rth(j-c)
Junction to case
Min. Typ. Max. Unit - - 0.80 V - - 12 mA - - 2 °C/W
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1/3
2016.02 - Rev.A
FORWARDNotNeRPOWERewcDoemsimgennsd DISSIPATION : PF (W)
RB238T-40 lElectrical Characteristic Curves
Data Sheet
FORWARDedCURRENTfo: IFr(A)
100
Tj = 150°C 10
1 0.1 0.01
Tj = 125°C Tj = 75...
