Schottky Barrier Diode
RB298NS100
Data Sheet
lApplication Switching power supply
lFeatures 1) Cathode common dual type...
Schottky Barrier Diode
RB298NS100
Data Sheet
lApplication Switching power supply
lFeatures 1) Cathode common dual type 2) High reliability 3) Super low IR
lDimensions (Unit : mm)
(2)
RB298 NS100
1
(1) (3)
3.5 2.5 8.5
16
lLand size figure (Unit : mm)
11
9.9 2.5
2.54
TO-263S
2.54
lStructure
(2) Cathode
lConstruction Silicon epitaxial planar type
ROHM : TO-263S JEITA : SC-83 ①1 : Manufacture date
lTaping specifications (Unit : mm)
(1) Anode (3) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse
voltage
VRM
Duty≦0.5
110 V
Reverse
voltage Average forward rectified current
Non-repetitive forward current surge peak
Operating junction temperature
VR Io IFSM Tj
Direct reverse
voltage
60Hz half sin wave, resistive load, IO/2 per diode, Tc=100ºC Max.
60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle, per diode
-
100 V 30 A 100 A 150 °C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical and Therma...
