JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
RB500V-40 Schottky Barrier Diode
...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
RB500V-40 Schottky Barrier Diode
FEATURES z Low current rectifier schottky diode z Low
voltage, low inductance z For power supply
MAKING: 2
SOD-323
The marking bar indicates the cathode Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Peak reverse
voltage
VRM
DC reverse
voltage
VR
Mean rectifying current Non-repetitive Peak Forward Surge Current@t=8.3ms
IO IFSM
Power dissipation
PD
Thermal Resistance Junction to Ambient
Junction temperature
RθJA Tj
Storage temperature
Tstg
Limit 45 40 0.1 1
200
500 125 -55~+150
Unit V V A A mW
℃/W ℃ ℃
Electrical Ratings @Ta=25℃ Parameter
Forward
voltage Reverse current Capacitance between terminals
Symbol Min Typ VF IR CT 6
Max Unit 0.45 V
1 μA pF
Conditions IF=10mA VR=10V
VR=10V, f=1MHZ
www.cj-elec.com
1
E,Mar,2015
Typical Characteristics
100
Pulsed
Forward Characteristics
10
=100℃
T
a
=25℃
FORWARD CURRENT IF (mA)
1
T
a
0.1
0.01 0.0
0.2 0.4
FORWARD
VOLTAGE VF (V)
100
Pulsed
10
Reverse Characteristics
Ta=100℃
REVERSE CURRENT IR (uA)
1
0.1 Ta=25℃
0.01 0.6 0 8 16 24 32 40
REVERSE
VOLTAGE VR (V)
CAPACITANCE BETWEEN TERMINALS CT (pF)
POWER DISSIPATION PD (mW)
Capacitance Characteristics
20
Ta=25℃ f=1MHz
16
12
8
4
0 0 4 8 12 16 20
REVERSE
VOLTAGE VR (V)
250 200 150 100
50 0 0
Power Derating Curve
25 50 75 100...
