JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
RB520S-30 Schottky barrier Diode
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
RB520S-30 Schottky barrier Diode
FEATURES z Small surface mounting type z Low IR z High reliability
SOD-523
MARKING: B
The marking bar indicates the cathode Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Limit
DC reverse
voltage
Mean rectifying current NCounrr-erenpt@ettit=i8v.e3mPesak Forward Surge
Power dissipation Thermal resistance junction to ambient
VR IO IFSM
PD RθJA
30 200
1 150 667
Junction temperature Storage temperature
Tj Tstg
125 -55~+150
Unit V mA A mW ℃/W ℃ ℃
Electrical Ratings @Ta=25℃
Parameter Forward
voltage Reverse current
Symbol VF IR
Min Typ
Max Unit 0.6 V 1 μA
Conditions IF=200mA VR=10V
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1
E,Apr,2016
Typical Characteristics
Forward Characteristics
600 100
FORWARD CURRENT I (mA) F Ta=100 oC Ta=25 oC
10
1
0.1
0.01 0
100 200 300 400 500 600 700 800
FORWARD
VOLTAGE V (mV) F
REVERSE CURRENT I (uA) R
Reverse Characteristics
1000
100
Ta=100 oC
10
1
Ta=25 oC
0.1
0.01 0
5 10 15 20 25
REVERSE
VOLTAGE V (V) R
30
CAPACITANCE BETWEEN TERMINALS C (pF)
T
Capacitance Characteristics
100
Ta=25℃ f=1MHz
30
10
3
1 0 5 10 15 20
REVERSE
VOLTAGE V (V) R
POWER DISSIPATION P (mW) D
Power Derating Curve
200
150
100
50
0 0 25 50 75 100 125
AMBIENT TEMPERATURE T (℃) a
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2
E,Apr,2016
SOD-523 Package Outline Dimensions
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