Schottky Barrier Diode
RRBB52502S0SMM-4-04F0H
lApplications Small current rectification
lDimensions (Unit : mm)
0.8±0....
Schottky Barrier Diode
RRBB52502S0SMM-4-04F0H
lApplications Small current rectification
lDimensions (Unit : mm)
0.8±0.05
0.12±0.05
Data Sheet
AEC-Q101 Qualified
lLand size figure (Unit : mm) 0.8
1.2±0.05 1.6±0.1
0.6 1.7
lFeatures 1)Ultra small mold type. (EMD2) 2)Low IR 3)High reliability
lConstruction Silicon epitaxial
0.3±0.05
ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79
dot (year week factory)
0.6±0.1
EMD2 lStructure
lTaping specifications (Unit : mm)
lAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse
voltage (repetitive) Reverse
voltage (DC) Average rectified forward current
VRM VR Io
Forward current surge peak (60Hz・1cyc)
Junction temperature
IFSM Tj
Storage temperature
Tstg
Limits 45 40 200 1 150
-40 to +150
Unit V V mA A °C °C
lElectrical characteristics (Ta=25°C)
Parameter
Symbol
Forward
voltage
VF1 VF2
Reverse current
IR1 IR2
Min. -
Typ. -
Max. 0.39 0.55
1 10
Unit Conditions V IF=10mA V IF=100mA μA VR=10V μA VR=40V
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1/3
2011.06 - Rev.A
RB520SM-40FH
Data Sheet
FORWARD CURRENT:IF(mA)
1000
100 Ta=125℃
10 Ta=75℃
Ta=25℃ 1
0.1 0
Ta=-25℃ 100 200 300 400 500 600
FORWARD
VOLTAGE : VF(mV) VF-IF CHARACTERISTICS
REVERSE CURRENT:IR(μA)
1000 100 10 1 0.1 0.01
0.001 0
Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃
10 20 30 REVERSE
VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
40
510
Ta=25℃
500
IF=100mA n=30pcs
490
480 AVE:491.2mV 470
460 VF DISPERSION MAP
REVERSE CURRENT:IR(nA)
1000 900...
