RB751VM-40FH

Schottky Barrier Diode RB751VM-40FH Application High speed switching Dimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05 Datasheet AEC-Q101 Qualified Land size figure (Unit : mm) 0.9M IN . 1 .7 ± 0 .1 2 .5 ± 0 .2 0.8MIN. 2.1 Features 1) Ultra small mold type. (UMD2) 2) Low IR 3) High reliability Construction Silicon epitaxial planar UMD2 Structure 0.3±0.05 0.7±0.2 　　　 0.1 ROHM : UMD2 JEITA : SC-90/A JEDEC :SOD-323 dot (year week factory) Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ11.5.555±0.00.505 Cathode Anode 0.3±0.1 3.5±0.05 1.75±0.1 2.75 8.0±0.2 2.8±0.1 1.40±0.1 4.0±0.1 φ11..05 Absolute maximum ratings (Ta= 25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current VRM VR Io Forward current surge peak (60Hz・1cyc) Junction temperature IFSM Tj Storage temperature Tstg Limits 40 30 30 200 150 40 to 150 Unit V V mA mA °C °C 1.0±0.1 Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Forward voltage VF - - 0.37 Reverse current IR - - 0.5 Capacitance between terminals Ct - 2 - Unit Conditions V IF=1mA A VR=30V pF VR=1V , f=1MHz www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/5 2015.04 - Rev.D RB751VM-40FH Electrical characteristic curves Data Sheet FORWARD CURRENT : IF(mA) 100 10 Tj = 125°C Tj = 75°C 1 Tj = 25°C 0.1 Tj = 25°C 0.01 0 100 200 300 400 500 600 700 800 9001000 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE CUR...