DatasheetsPDF.com

RBR20BM30A Datasheet

Part Number RBR20BM30A
Manufacturers ROHM
Logo ROHM
Description Schottky Barrier Diode
Datasheet RBR20BM30A DatasheetRBR20BM30A Datasheet (PDF)

Schottky Barrier Diode RBR20BM30A lApplication General rectification lDimensions (Unit : mm) Data Sheet lLand size figure (Unit : mm) 6.0 3.0 2.0 6.0 lFeatures 1) Power mold type (TO-252) 2) Cathode common dual type 3) High reliability 4) Low VF 1 1.6 1.6 ROHM : TO-252 JEITA : SC-63 1 : Manufacture date TO-252 2.3 2.3 lStructure Cathode lConstruction Silicon epitaxial planar type lTaping Dimensions (Unit : mm) Anode Anode lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Co.

  RBR20BM30A   RBR20BM30A






Schottky Barrier Diode

Schottky Barrier Diode RBR20BM30A lApplication General rectification lDimensions (Unit : mm) Data Sheet lLand size figure (Unit : mm) 6.0 3.0 2.0 6.0 lFeatures 1) Power mold type (TO-252) 2) Cathode common dual type 3) High reliability 4) Low VF 1 1.6 1.6 ROHM : TO-252 JEITA : SC-63 1 : Manufacture date TO-252 2.3 2.3 lStructure Cathode lConstruction Silicon epitaxial planar type lTaping Dimensions (Unit : mm) Anode Anode lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive Peak Reverse Voltage VRM Duty≦0.5 30 V Reverse Voltage Average Forward Rectified Current Non-repetitive Forward Current Surge Peak Operating Junction Temperature VR Io IFSM Tj Direct Reverse Voltage 60Hz half sin wave, Non-resistive load, IO/2 per diode, Tc=75°C Max. 60Hz half sin wave, Non-repetitive at Ta=25°C, 1cycle, per diode - 30 20 100 150 V A A °C Storage Temperature Tstg - -55 to +150 °C lElectrical and Thermal Characteristics (Tj = 2.


2017-04-03 : VLMK33S1T1-GS08    VLMK33S1T1-GS18    VLME31R1S2-GS08    VLME31R1S2-GS18    VLME31S1T1-GS08    VLME31S1T1-GS18    VLME3100    VLME3101    VLME3105    VLMF3100   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)