Schottky Barrier Diode
RBR20BM30A
lApplication General rectification
lDimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
6.0
3.0 2.0 6.0
lFeatures 1) Power mold type (TO-252) 2) Cathode common dual type 3) High reliability 4) Low VF
1 1.6 1.6
ROHM : TO-252
JEITA : SC-63 1 : Manufacture date
TO-252
2.3 2.3
lStructure
Cathode
lConstruction Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
Anode Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Co.
Schottky Barrier Diode
Schottky Barrier Diode
RBR20BM30A
lApplication General rectification
lDimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
6.0
3.0 2.0 6.0
lFeatures 1) Power mold type (TO-252) 2) Cathode common dual type 3) High reliability 4) Low VF
1 1.6 1.6
ROHM : TO-252
JEITA : SC-63 1 : Manufacture date
TO-252
2.3 2.3
lStructure
Cathode
lConstruction Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
Anode Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive Peak Reverse Voltage
VRM
Duty≦0.5
30 V
Reverse Voltage Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
Operating Junction Temperature
VR Io IFSM Tj
Direct Reverse Voltage
60Hz half sin wave, Non-resistive load, IO/2 per diode, Tc=75°C Max.
60Hz half sin wave, Non-repetitive at Ta=25°C, 1cycle, per diode
-
30 20 100 150
V A A °C
Storage Temperature
Tstg
- -55 to +150 °C
lElectrical and Thermal Characteristics (Tj = 2.