RBR3LAM40C
Schottky Barrier Diode
●Outline
VR 40 V
Io 3 A
IFSM 75 A
●...
RBR3LAM40C
Schottky Barrier Diode
●Outline
VR 40 V
Io 3 A
IFSM 75 A
●Features High reliability Small power mold type Low VF
●Inner Circuit
Data sheet
●Application
●Packaging Specifications
General rectification
Packing
Embossed Tape
Reel Size(mm)
180
●Structure
Taping Width(mm) Quantity(pcs)
12 3000
Silicon epitaxial planar
Taping Code
TR
Marking
A8
●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse
voltage Reverse
voltage
Average rectified forward current
VRM VR
Io
Duty≦0.5
Reverse direct
voltage
Glass epoxy mounted、 60Hz half sin waveform、resistive load、
Tc=110℃ Max.
40 40
3
V V
A
Peak forward surge current
IFSM
60Hz half sin waveform、Non-repetitive、 one cycle、Ta=25℃
75
A
Junction temperature(1)
Tj -
Storage temperature
Tstg -
Note(1) To avoid occurrence of thermal runaway, actual board is to be designed to fulfill dPd/dTj<1/Rth(j-a).
150 -55 ~ 150
℃ ℃
●Characteristics (Tj=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward
voltage Reverse current
VF
IF=3A
- - 0.55 V
IR
VR=40V
- - 100 μA
Attention
www.rohm.com © 2016- ROHMCo., Ltd.All rights reserved.
1/5
2019/05/28_Rev.002
RBR3LAM40C
●Characteristic Curves
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