RC241S…RC246S
NPN Silicon Epitaxial Planar Transistor
for high current switching, interface circuit and driver circuit application.
• With built-in bias resistor • Simplify circuit design • Reduce a quantity of parts and manufacturing process
Base (Input)
R1 R2
Collector (Output)
Emitter (Common)
Resistor Values Type
RC241S RC242S RC243S RC244S RC245S RC246S
R1 (KΩ) 1 2.2 4.7 10 1 2.2
1. Emitter 2. Collector 3. Base TO-92 Plastic Package
R2 (KΩ) 1 2.2 4.7 10 10 10
Absolute Maximum Rating.
NPN Transistor
RC241S…RC246S
NPN Silicon Epitaxial Planar Transistor
for high current switching, interface circuit and driver circuit application.
• With built-in bias resistor • Simplify circuit design • Reduce a quantity of parts and manufacturing process
Base (Input)
R1 R2
Collector (Output)
Emitter (Common)
Resistor Values Type
RC241S RC242S RC243S RC244S RC245S RC246S
R1 (KΩ) 1 2.2 4.7 10 1 2.2
1. Emitter 2. Collector 3. Base TO-92 Plastic Package
R2 (KΩ) 1 2.2 4.7 10 10 10
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Output Voltage
Input Voltage
Output Current Total Power Dissipation Junction Temperature Storage Temperature Range
RC241S RC242S RC243S RC244S RC245S RC246S
Symbol VO
VI
IO Ptot Tj Tstg
Value 50
10, -10 12, -10 20, -10 30, -10 10, -5 12, -6
300 200 150 - 55 to + 150
Unit V
V
mA mW OC OC
SEMTECH ELECTRONICS LTD.
®
Dated : 23/08/2016 Rev:03
RC241S…RC246S
Characteristics at Ta = 25 OC Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain at VO = 5 V, IO = 50 mA
RC241S
33 - - -
RC242S
39 - - -
RC243S
GI
47
-
-
-
RC244S
56 - - -
RC245S
56 - - -
RC246S
56 - - -
Output Cutoff Current at VO = 30 V
Input Current at VI = 5 V
IO(OFF)
RC241S RC242S RC243S RC244S RC245S RC246S
II
-
-
- 10 µA
- 7.2 - 3.8 - 1.8 mA - 0.88 - 7.2 - 3.6
Output Voltage at IO = 10 mA, II = 0.5 mA
VO(ON)
-
- 0.3 V
Input Voltage (ON)
at VO = 0.3 V, IO = 20 mA
RC241S
--3
RC242S
--3
RC243S VI(ON)
-
-
3V
RC244S
--3
RC245S
--3
RC246S
--2
Input Voltage (.