RD02MUS2

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS2 0.2+/-0.05 (0.22) (0.22) (0.25) RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DESCRIPTION RD02MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. This device have an interal monolithic zener diode from gate to source for ESD protection. OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 6.0+/-0.15 1 4.9+/-0.15 1.0+/-0.05 2 FEATURES High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz High Efficiency:65%typ.(175MHz) High Efficiency:65%typ.(520MHz) Integrated gate protection diode 3 (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm APPLICATION For output stage of high power amplifiers In VHF/UHF band mobile radio sets. RoHS COMPLIANT www.DataSheet4U.com RD02MUS2-101,T112 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) RD02MUS2 MITSUBISHI ELECTRIC 1/9 17 Jan. 2006 3.5+/-0.05 2.0+/-0.05 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS2 UNIT V V W W A °C °C °C...