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RF3L05150CB4 Datasheet

Part Number RF3L05150CB4
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description RF power LDMOS transistor
Datasheet RF3L05150CB4 DatasheetRF3L05150CB4 Datasheet (PDF)

RF3L05150CB4 Datasheet 150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor 1 2 5 4 LBB 3 Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate A Features Order code RF3L05150CB4 Frequency 520 MHz VDD 28 V POUT 150 W Gain 23 dB Efficiency 60 % • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • In compliance with the european .

  RF3L05150CB4   RF3L05150CB4






RF power LDMOS transistor

RF3L05150CB4 Datasheet 150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor 1 2 5 4 LBB 3 Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate A Features Order code RF3L05150CB4 Frequency 520 MHz VDD 28 V POUT 150 W Gain 23 dB Efficiency 60 % • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • In compliance with the european directive 2002/95/EC Applications • 2-30 MHz HF or short wave communication • 30-88 MHz ground communication • 118-140 MHz Avionics • 136-174 MHz commercial ground communication • 30-512 MHz Jammer, ground/air communication • HF to 1000 MHz ISM - instrumentation Description The RF3L05150CB4 is a 150 W, 28/32 V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz. It can be used in class AB, B or C for all typical modulation formats. Product status link RF3L05150CB4 Product summary Order code RF3L05150CB4 Marking 3L05150 Package LBB Packing Tape and reel 13" Base/bulk quantity 100/100 DS13358 - Rev 3 - March 2021 For further information contact your local STMicroelectronics sales office. www.st.com RF3L05150CB4 Electrical ratings 1 Electrical ratings Symbol VDS VGS VDD TSTG TJ Table 1. Absolute maximum ratings (TC = 25 °C) Parameter Drain-source voltage Gate-source voltage Maximum operating voltage Storage temperature.


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