RF6100-4

www.DataSheet4U.com RF6100-4 0 Typical Applications 3V CDMA US-PCS Handset 3V CDMA2000/1XRTT US-PCS Handset 3V CDMA2000/1X-EV-DO US-PCS Handset Spread-Spectrum System Product Description 1 3V 1900MHZ LINEAR POWER AMPLIFIER MODULE 1.40 1.25 0.800 1.000 TYP 0.000 0.600 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT 9 Package Style: Module (4mmx4mm) GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Features Input/Output Internally Matched@50 Ω 28.5dBm Linear Output Power 39% Peak Linear Efficiency 28dB Linear Gain VCC1 1 RF IN 2 GND 3 VMODE 4 VREG 5 Bias 10 VCC2 9 GND 8 RF OUT 7 GND 6 GND -48dBc ACPR @ 1.25MHz Ordering Information RF6100-4 3V 1900MHz Linear Power Amplifier Module RF6100-4 PCBA Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA 3.000 The RF6100-4 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in 3V IS-95/CDMA 2000 1X handheld digital cellular equipment, spread-spectrum systems, and other applications in the 1850MHz to 1910MHz band. The RF6100-4 has a digital control line for low power applications to lower quiescent current. The device is self-contained with 50 Ω input and output that is matched to obtain optimum power, efficiency and linearit...