RFD14N05SM

RFD14N05, RFD14N05SM, RFP14N05 Data Sheet January 2002 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09770. Features 14A, 50V rDS(ON) = 0.100Ω Temperature Compensating PSPICE ® Model Peak Current vs Pulse Width Curve UIS Rating Curve 175o C Operating Temperature Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFD14N05 RFD1 4N05SM RFP14N05 PACKAGE TO-251AA TO-252AA TO-220AB BRAND D14N05 D14N05 RFP14N05 G Symbol D NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05SM9A. S Packaging JEDEC TO-251AA SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE JEDEC TO-252AA DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation RFD14N05, RFD14N05SM, RFP14N05 Rev. B1 RFD14N05, RFD14N05SM, RFP14N05 Absolute Maximum Ratings T C = 25 oC, Unless Otherwise Specified RFD14N05, RFD14N05SM, RFP14N05 50 50 ± 20 14 Refer to...