RFL1N10

Semiconductor RFL1N08, RFL1N10 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09282. September 1998 Features 1A, 80V and 100V rDS(ON) = 1.200Ω [ /Title (RFL1N 08, RFL1N1 0) /Subject (1A, 80V and 100V, 1.200 Ohm, NChannel, Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel, Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdf- Ordering Information PART NUMBER RFL1N08 RFL1N10 PACKAGE TO-205AF TO-205AF BRAND RFL1N08 RFL1N10 NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-204AA DRAIN (CASE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 File Number 1385.2 5-1 RFL1N08, RFL1N10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFL1N08 80 80 1 5 ±20 8.33 0.0667 -55 to 150 260 RFL1N10 100 100 1 5 ±20 8.33 0.0667 -55 to 150 260 UNITS V V A A V W W/oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note...