RFL1N15

Semiconductor RFL1N12, RFL1N15 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09196. January 1998 Features 1A, 120V and 150V rDS(ON) = 1.9Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFL1N12 RFL1N15 PACKAGE TO-205AF TO-205AF BRAND G S RFL1N12 RFL1N15 NOTE: When ordering, use the entire part number. Packaging JEDEC TO-205AF DRAIN (CASE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 File Number 1444.2 5-1 RFL1N12, RFL1N15 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFL1N12 120 120 1 5 ±20 8.33 0.0667 -55 to 150 300 260 RFL1N15 150 150 1 5 ±20 8.33 0.0667 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . ....