Semiconductor
RFL1N18, RFL1N20
1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enh...
Semiconductor
RFL1N18, RFL1N20
1A, 180V and 200V, 3.65 Ohm, N-Channel Power
MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09289.
January 1998
Features
1A, 180V and 200V rDS(ON) = 3.65Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
Ordering Information
G
PART NUMBER RFL1N18 RFL1N20
PACKAGE TO-205AF TO-205AF
BRAND RFL1N18 RFL1N20
S
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-205AF
DRAIN (CASE) GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright
© Harris Corporation 1997
File Number
1442.2
5-1
RFL1N18, RFL1N20
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFL1N18 180 180 1 5 ±20 8.33 0.0667 -55 to 150 300 260 RFL1N20 200 200 1 5 ±20 8.33 0.0667 -55 to 150 300 260 UNITS V V A A V W W/oC oC
oC oC
Drain to Source Breakdown
Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . ...