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RFL2N06 Datasheet

Part Number RFL2N06
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description 2A/ 50V and 60V/ 0.95 Ohm/ N-Channel Power MOSFETs
Datasheet RFL2N06 DatasheetRFL2N06 Datasheet (PDF)

Semiconductor RFL2N05, RFL2N06 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09378. January 1998.

  RFL2N06   RFL2N06






Part Number RFL2N06L
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description 2A/ 60V/ 0.950 Ohm/ Logic Level/ N-Channel Power MOSFET
Datasheet RFL2N06 DatasheetRFL2N06L Datasheet (PDF)

RFL2N06L Data Sheet October 1999 File Number 1560.3 2A, 60V, 0.950 Ohm, Logic Level, N-Channel Power MOSFET The RFL2N06L N-channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA95.

  RFL2N06   RFL2N06







Part Number RFL2N05
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description 2A/ 50V and 60V/ 0.95 Ohm/ N-Channel Power MOSFETs
Datasheet RFL2N06 DatasheetRFL2N05 Datasheet (PDF)

Semiconductor RFL2N05, RFL2N06 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09378. January 1998.

  RFL2N06   RFL2N06







2A/ 50V and 60V/ 0.95 Ohm/ N-Channel Power MOSFETs

Semiconductor RFL2N05, RFL2N06 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09378. January 1998 Features • 2A, 50V and 60V • rDS(ON) = 0.95Ω • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information G PART NUMBER RFL2N05 RFL2N05 PACKAGE TO-205AF TO-205AF BRAND RFL2N05 RFL2N05 S NOTE: When ordering, include the entire part number. Packaging JEDEC TO-205AF DRAIN (CASE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 File Number 1497.2 5-1 RFL2N05, RFL2N06 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFL2N05 50 50 ±20 2 10 8.33 0.0667 -55 to 150 300 260 RLF2N06 60 60 ±20 2 10 8.33 0.0667 -55 to 150 300 260 UNITS V V V A A W W/ oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . ..


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