RFN2LAM4STF

Super Fast Recovery Diode RFN2LAM4STF Datasheet Series Dimensions (Unit : mm) AEC-Q101 Qualified Land Size Figure (Unit : mm) Standard Fast Recovery 2.50±0.20 0.17± 0.10 0.05 2.0 3.70±0.20 4.70±0.14 1.4 4.4 (1) Applications General rectification PMDTM Features 1) Low forward voltage 2) Low switching loss 3) High current overload capacity (2) 1.50±0.20 0.95±0.10 ROHM : PMDTM JEDEC : SOD-128 : Manufacture Date Construction Silicon epitaxial planar type Taping Dimensions (Unit : mm) Structure Cathode Anode Absolute Maximum Ratings (Tl= 25°C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average forward rectified current Io Non-repetitive forward surge current IFSM Junction temperature Tj Storage temperature Tstg Electrical Characteristics (Tj= 25°C) Parameter Symbol Forward voltage Reverse current Reverse recovery time VF IR trr Thermal resistance Rth(j-l) Conditions Limits Unit Duty≦0.5 400 V Direct reverse voltage Glass epoxy board mounted, 60Hz half sin wave, resistive load 60Hz half sin wave, non-repetitive at Tj=25ºC Tｌ=102°C - 400 1.5 50 150 V A A °C - 55 to 150 °C Conditions IF=1.5A VR=400V IF=0.5A, IR=1A, Irr=0.25×IR Junction to lead Min. Typ. Max. Unit 0.65 0.88 1.2 V - - 1 A - 22 30 ns - - 25 °C/W www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 1/4 2017.06 - Rev.A RFN2LAM4STF Electrical Characteristic Curves Datasheet FORWARD CURRENT : IF(A) 100 Tj = 150°C 10...