Semiconductor
RFM12N18, RFM12N20, RFP12N18, RFP12N20
12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs
Description...
Semiconductor
RFM12N18, RFM12N20, RFP12N18, RFP12N20
12A, 180V and 200V, 0.250 Ohm, N-Channel Power
MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09293.
BRAND RFM12N18 RFM12N20 RFP12N18 RFP12N20
G
September 1998
Features
12A, 180V and 200V rDS(ON) = 0.250Ω Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
[ /Title (RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20) /Subject (12A, 180V and 200V, 0.250 Ohm, NChannel Power
MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power
MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN
Ordering Information
PART NUMBER RFM12N18 RFM12N20 RFP12N18 RFP12N20 PACKAGE TO-204AA TO-204AA TO-220AB TO-220AB
Symbol
D
NOTE: When ordering, use the entire part number.
S
Packaging
JEDEC TO-204AA
DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE DRAIN GATE
DRAIN (TAB)
SOURCE (PIN 2) GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright
© Harris Corporation 1998
File Number
1461.2
5-1
RFM12N18, RFM12N20, RFP12N18, RFP12N20
Absolute Maximum Ratings
TC = 25oC, Unless Ot...