RFP2N08

Semiconductor RFP2N08, RFP2N10 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs Description These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09282. July 1998 Features 2A, 80V and 100V rDS(ON) 1.05Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information G PART NUMBER RFP2N08 RFP2N10 PACKAGE TO-220AB TO-220AB BRAND RFP2N08 RFP2N10 S NOTE: When ordering, use entire part number. Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright © Harris Corporation 1998 File Number 2883.1 5-1 RFP2N08, RFP2N10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP2N08 80 80 2 5 ±20 25 0.2 -55 to 150 300 260 RFP2N10 100 100 2 5 ±20 25 0.2 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS D...